Quality and Reliability Engineering International

Table of Contents

Volume 9 Issue 4 (July/August 1993)

fmi-fmi, 237-398

Masthead

Masthead

  • Author:
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090401 (p fmi-fmi)

Editor's Comment

Editor's comments

  • Author: H. H. Berger, W. H. Gerling
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090402 (p 237-237)

Articles

Simulation, a tool for designing‐in reliability

  • Author: Aarnout Brombacher, Erik Van Geest, Robert Arendsen, Anne Van Steenwijk, Otto Herrmann
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090403 (p 239-249)

The impact of electronic components on the reliability of cars

  • Author: Hans‐Georg Kumpfmüller
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090404 (p 251-255)

Field components reliability analysis for french telecommunications equipment

  • Author: J. Y. Boulaire, B. Bauduin, A. Lelievre
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090405 (p 257-265)

Plastic encapsulated ic reliability prediction modelling: Principal results

  • Author: M. Nallino, R. Digout, G. Deleuze, M. Brizoux
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090406 (p 267-279)

Robust design of circuits susceptible to electromigration

  • Author: Erik van Geest, Aarnout Brombacher, Otto Herrmann
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090407 (p 281-285)

Electromigration, models and atomistic interpretation

  • Author: Reiner Kirchheim
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090408 (p 287-293)

Electromigration early resistance increase measurements

  • Author: J. Niehof, P. A. Flinn, T. J. Maloney
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090409 (p 295-298)

Electromigration in ALCu interconnections with W‐plug contacts

  • Author: L. Ferlazzo, G. Reimbold, J. P. Gonchond, M. Heitzmann, O. Demolliens, G. Lormand
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090410 (p 299-302)

Thermoreflectance optical test probe for the measurement of current‐induced temperature changes in microelectronic components

  • Author: W. Claeys, S. Dilhaire, V. Quintard, J. P. Dom, Y. Danto
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090411 (p 303-308)

On the use of DC measurements for ESD‐related process monitoring

  • Author: Jan Marc Luchies, Fred Kuper, Jan Verweij
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090412 (p 309-313)

Analysis of ESD protection networks for DMOS power transistors by means of static and time‐resolved emission microscopy

  • Author: Bruno Bonati, Athos Canclini, Marianna Cavone, Enrico Novarini, Paolo Pavan, Roberto Rivoir, Michele Stucchi, Enrico Zanoni
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090413 (p 315-319)

Breakdown characteristics of gate and tunnel oxides versus field and temperature

  • Author: Christophe Monsérié, Patrick Mortini, Gérard Ghibaudo, Georges Pananakakis
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090414 (p 321-324)

A new approach to statistically modelling the time dependent oxide breakdown

  • Author: R.‐P. Vollertsen
  • Pub Online: Mar 20, 2007
  • DOI: 10.1002/qre.4680090415 (p 325-331)
Page:   1 2 3 Next

Related Topics

Related Publications

Related Content

Site Footer

Address:

This website is provided by John Wiley & Sons Limited, The Atrium, Southern Gate, Chichester, West Sussex PO19 8SQ (Company No: 00641132, VAT No: 376766987)

Published features on StatisticsViews.com are checked for statistical accuracy by a panel from the European Network for Business and Industrial Statistics (ENBIS)   to whom Wiley and StatisticsViews.com express their gratitude. This panel are: Ron Kenett, David Steinberg, Shirley Coleman, Irena Ograjenšek, Fabrizio Ruggeri, Rainer Göb, Philippe Castagliola, Xavier Tort-Martorell, Bart De Ketelaere, Antonio Pievatolo, Martina Vandebroek, Lance Mitchell, Gilbert Saporta, Helmut Waldl and Stelios Psarakis.